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Description
Jul 12, 2016 FQP20N06 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.03301 g. Each. Manufacturing Process Information. Terminal Finish. Nov 16, 2007 FQP20N06 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTP3N60A4D_NL. HGTP3N60A4D. Fairchild Semiconductor.
Part Number | FQP20N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET N-CH 60V 20A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 53W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image | ![]() |
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