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Description
The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer 2N4416 / 2N4416A /SST4416. Vishay Siliconix. Document Number: 70242. S- 50147 Rev. H, 24-Jan-05 www.vishay.com. 1. N-Channel JFETs. PRODUCT 2N4416 / 2N4416A / PN4416. FEATURES. Low Noise. Low Feedback Capacitance. Low Output Capacitance. High Transconductance. High Power Gain. CP210- 2N4416A . N-Channel JFET Die. Die Size. 15 x 15 MILS. Die Thickness. 8.0 MILS. Drain Bonding Pad Size. 3.2 x 4.0 MILS. Source Bonding Pad Size. GEOMETRY. PROCESS DETAILS. PRINCIPAL DEVICE TYPES. 2N4416A . CMPF4416A. GROSS DIE PER 4 INCH WAFER. 53,730. PROCESS CP210.
| Part Number | 2N4416A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Maxim |
| Description | JFET N-CH 35V 0.3W TO-72 |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 15V |
| Resistance - RDS(On) | - |
| Power - Max | 300mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Image |  |
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