Part Number | FDB28N30TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET N-CH 300V 28A D2PAK |
Series | UniFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 129 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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FDB28N30TM
MAXI
32400
1.27
HK HEQING ELECTRONICS LIMITED
FDB28N30TM
MAXIX
3000
2.145
Shenzhen Qiangneng Electronics Co., Ltd.
FDB28N30TM
MAXMI
10000
3.02
HONG KONG HORNG SHING LIMITED
FDB28N30TM
MXAIM
184
3.895
WIN AND WIN ELECTRONICS LIMITED
FDB28N30TM
MAMIX
9000
4.77
Nosin (HK) Electronics Co.