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Description
Datasheet Jul 14, 2015 Unit Type. FDS4435BZ . FDS4435BZ . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751 g. Each. Manufacturing Process Information. Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS4435BZ . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. Fairchild 2N7002. P1. 1. 30V, 8.8A p-channel MOSFET. (8 SO). Fairchild FDS4435BZ . R1. 1. 249kI Q1% resistor (0603). R2. 1. 36.5kI Q1% resistor (0603). R3. 1. SNVS255A MAY 2004 REVISED MAY 2004. LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability. Check for Samples: LM5110. 6 VC3. 7 VC2. 8 VC1. U1. BQ29412DCT. C8. 0.1uF. C7. 0.1uF. C5. 0.1uF. C10. 0.22uF. 1. 2. 3. F1. C14. 0.1uF. Q2. Si7114DN. Q5. FDS4435BZ . R28. 300. 1W.
| Part Number | FDS4435BZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Maxim |
| Description | MOSFET P-CH 30V 8.8A 8-SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1845pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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