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Description
DATASHEET 1. Technische Information / Technical Information. FS150R07N3E4 . IGBT-Module . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11- FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. . Preliminary Data. 1. / Technical Information. FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. FS150R07N3E4 . 650. 150. 0.35. 1.55. FS200R07N3E4R. 650. 200. 0.25. 1.55. 1200V. FS75R12KT4_B15. 1200. 75. 0.39. 1.85. FS100R12KT4G. 1200. 100. design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet. FS150R07N3E4 . Rev.
| Part Number | FS150R07N3E4 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Modules |
| Brand | Maxim |
| Description | IGBT MODULE 650V 150A |
| Series | * |
| IGBT Type | Trench Field Stop |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 150A |
| Power - Max | 430W |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 150A |
| Current - Collector Cutoff (Max) | 1mA |
| Input Capacitance (Cies) @ Vce | 9.3nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Image |  |
FS150R07N3E4
MAXI
500
1.03
Shenzhen Qiangneng Electronics Co., Ltd.
FS150R07N3E4
MAXIX
3000
2.13
HONGKONG SINIKO ELECTRONIC LIMITED
FS150R07N3E4
MAXMI
5000
3.23
HITO TECHNOLOGY LIMITED
FS150R07N3E4
MXAIM
2000
4.33
Redstar Electronic Limited
FS150R07N3E4
MAMIX
11001
5.43
Ande Electronics Co., Limited
