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Description
Aug 25, 1997 infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. IRF7304 . D1. HEXFET Power MOSFET. PD - 95038. 10/6/04 l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in IRF7304 . 428. 197. 30V P-channel. IRLML5103. 167. 71. 20V P-channel. IRLML6302. 159. 58. For complimentary,refer to respective n-channel or p- channel du. MOSFET (e.g., < 8 V of IRF7304 ). The maximum output current, IMAX, determines the RDS(ON) requirement for power MOSFET. When the ADP1147 is oper-. (e.g., < 8 volts for IRF7304 ). The RDS(ON) requirement for the selected power MOSFET is determined by the maximum output current (IMAX). An as- sumption
| Part Number | IRF7304 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Maxim |
| Description | MOSFET 2P-CH 20V 4.3A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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