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Description
IRF830PbF . SiHF830-E3. SnPb. IRF830. SiHF830. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Page 1. PD-9.31 1K. lRF83O. International-. E Rectifier. HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 Repetitive Avalanche Rated D _. Page 1. VISHAY VITRAMON. Capacitor Products. Application Note. Preventing Capacitor Arc-Over in Lighting Applications with HVArc Guard MLCCs. IRF830PBF . 500. 1500. 4.5. 2.9. 25.3. 14.7. 1.7. 74. IRF820. 500. 3000. 2.5. 1.6. 16. 8.7. 2.5. 50. IRF820A. 500. 3000. 2.5. 1.6. 11.3. 5.7. 2.5. 50. IRF820APBF. IRF830PBF . 500. 1500. 4.5. 2.9. 25.3. 14.7. 1.7. 74. IRF840APBF. 500. 850. 8. 5.1 . 25.3. 12. 1. 125. IRF840LCPBF. 500. 850. 8. 5.1. 26. 12.7. 1. 125. IRF840PBF.
| Part Number | IRF830PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Maxim |
| Description | MOSFET N-CH 500V 4.5A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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