Part Number | IXFH60N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET N-CH 650V 60A TO-247 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6180pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 780W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | - |
Package / Case | TO-247-3 |
Image |
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