Maxim

Description

Jan 28, 2013 Cf: 60%. Ea: 0.7. Tu: 25. C. Process Description: FAB-101 0.18 m Silicon Gate CMOS (S18). Process Information: MAX77609EWJ+. MAX77686EWE. MAX77693EWQ . MAX8955E/DW. MAX8957BEWI. MAX8957EWI+T. MAX8957TEWI+. MAX8959EWG+. MAX8968EWL+. MAX8971EWP+. MAX8971EWP+. Apr 17, 2013 C. Process Description: FAB-101 0.18 m Silicon Gate CMOS (S18). Process Information: MAX77179EWC. MAX77609EWJ+. MAX77609EWJ+. MAX77693EWQ . MAX77693EWQ . MAX77802EWW. MAX8955E/DW. MAX8957BEWI. MAX8957EWI+T. MAX8957TEWI+. MAX8967EWV+. MAX8997EWW+. Jul 24, 2013 San Antonio 0.18 m Silicon Gate CMOS (S18). Process Information: MAX17048. MAX20021ATIA. MAX44005EDT+. MAX77231EZL+. MAX77311EWE. MAX77387EWP. MAX77693EWQ . MAX88320EFD+. MAX88921EFD+. MAX8973AEWI. MAX8986EWG+. FITS: 3.9. MTTF (YRS): 29388. FAILURE RATE :. Oct 15, 2013 San Antonio 0.18 m Silicon Gate CMOS (S18). Process Information: MAX14576EVB+. MAX14667EKA. MAX16840ATB+. MAX17047. MAX17048. MAX17491GTA+. MAX20021ATIA. MAX44005EDT+. MAX44005EDT+. MAX77231EZL+. MAX77311EWE. MAX77693EWQ . MAX77803EWJ+. MAX88320EFD+. Apr 17, 2013 3/31/2013. The parameters used to calculate this failure rate are as follows: Cf: 60%. Ea: 0.7. Tu: 25. C. Process Description: San Antonio 0.18 m Silicon Gate CMOS (S18). Process Information: MAX17048. MAX77231EZL+. MAX77387EWP . MAX77693EWQ . MAX98400AET. FITS: 6.9. MTTF (YRS): 16542.