Part Number | SI2315BDS-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET P-CH 12V 3A SOT23-3 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.85A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Si2315BDS-T1-GE3
MAXI
15320
1.17
HK HEQING ELECTRONICS LIMITED
SI2315BDS-T1-GE3
MAXIX
6000
1.77
Gallop Great Holdings (Hong Kong) Limited
SI2315BDS-T1-GE3
MAXMI
35800
2.37
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI2315BDS-T1-GE3
MXAIM
33546
2.97
ATLANTIC TECHNOLOGY LIMITED
SI2315BDS-T1-GE3
MAMIX
4868000
3.57
Shenzhen WTX Capacitor Co., Ltd.