Part Number | SI4116DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET N-CH 25V 18A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1925pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4116DY-T1-GE3
MAXI
32600
0.74
HK HEQING ELECTRONICS LIMITED
SI4116DY-T1-GE3
MAXIX
2500
1.945
Dan-Mar Components Inc.
SI4116DY-T1-GE3
MAXMI
3393
3.15
Nosin (HK) Electronics Co.
SI4116DY-T1-GE3
MXAIM
100
4.355
Yingxinyuan INT'L (Group) Limited
SI4116DY-T1-GE3
MAMIX
263610
5.56
Cicotex Electronics (HK) Limited