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Description
Datasheet Feb 17, 2004 SI4800 . N-channel TrenchMOS logic level FET. Rev. 02 17 February 2004. Product data. M3D315. 1. Product profile. 1.1 Description. Vishay Siliconix. Si4800BDY. Document Number: 72124. S-83039-Rev. H, 29- Dec-08 www.vishay.com. 1. N-Channel Reduced Q g. , Fast Switching MOSFET. Si4800DY. Vishay Siliconix. Document Number: 70856. S-31062 Rev. B, 26- May-03 www.vishay.com. 1. N-Channel Reducded Qg, Fast Switching MOSFET. Jan 15, 2001 Q1. Si4416DY or Si4800 *. 5, 6, 7, 8. 1, 2, 3. R1. L1. C13. 0.1 mF. R11. 0. D2A. CMPD2836. D2B. CMPD2836. Q3. Si4812DY or. Si4800 *. 1. 2, 3. Top MOSFET = Si4800 . 100. 120. 140. 160. 180. 200. 220. 240. 260. -60 -30. 0. 30. 60. 90 120 150. I CS. ( . A). TEMPERATURE ( C). Overcurrent Trip Point vs.
| Part Number | SI4800 |
| Brand | Maxim |
| Image |  |
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