Description
MOSFET 2P-CH 8V 8SOIC Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4965DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Maxim |
Description | MOSFET 2P-CH 8V 8SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
SI4965DY-T1-E3
MXAIM
200
3.5225
Hantech Electronics Ltd
SI4965DY-T1-E3
MAMIX
2500
4.33
Orient Power Technology (HK) Co., Limited
SI4965DY-T1-E3
MAXI
1516
1.1
HK HEQING ELECTRONICS LIMITED
SI4965DY-T1-E3
MAXIX
204383
1.9075
Cicotex Electronics (HK) Limited
SI4965DY-T1-E3
MAXMI
63289
2.715
ATLANTIC TECHNOLOGY LIMITED