Part Number | SI5432DC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Maxim |
Description | MOSFET N-CH 20V 6A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
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SI5432DC-T1-GE3
MAXI
500
1.75
Gallop Great Holdings (Hong Kong) Limited
SI5432DC-T1-GE3
MAXIX
50000
3.0975
Hong Kong Yingweida Electronics Co., Ltd.
SI5432DC-T1-GE3
MAXMI
5000000
4.445
Hongkong Shengshi Electronics Limited
SI5432DCT1GE3
MXAIM
3050
5.7925
FLOWER GROUP(HK)CO.,LTD
SI5432DC-T1-GE3
MAMIX
4868000
7.14
Shenzhen WTX Capacitor Co., Ltd.